LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell array with tight erase distribution

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell having improved topology and reduced leakage current

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell having reduced capacitance across the layer of tunne

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell having reduced cell area

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell on SOI

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell structure and architecture with increased capacitanc

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell structure and array architecture

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell testing circuit

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell using conventional process steps

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Eeprom cell with asymmetric thin window

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell with channel hot electron programming and method for

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell with field-edgeless tunnel window using shallow tren

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell with improved tunneling properties

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell with self-aligned tunneling window

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell with the drain diffusion region self-aligned to the

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell with trench coupling capacitor

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell with tunneling across entire separated channels

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM cell with tunneling at separate edge and channel regions

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

EEPROM device and method for fabricating same