Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-08-06
1993-11-23
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257322, 257399, H01L 2968
Patent
active
052647188
ABSTRACT:
An electrically-erasable, electrically-programmable, read-only-memory cell array is formed in pairs at a face of a semiconductor substrate (22). Each memory cell includes a source (11) and a drain (12), with a corresponding channel (Ch) between. A control gate (14) is disposed over the floating gate (13), insulated by an intervening inter-level dielectric (27). The floating gate (13) and the control gate (14) include a channel section (Ch). The channel section (Ch) is used as a self-alignment implant mask for the sources (11) and drains (12), such that the channel-junction edges are aligned with the corresponding edges of the channel section (Ch). Each memory cell is programmed by hot-carrier injection from the channel to the floating gate (13), and erased by Fowler-Nordheim tunneling from the floating gate (13) to the source (11). The program and erase regions of each cell are physically separate from each other, and the characteristics of each of those regions may be made optimum independently from each other. Field oxide insulators (25) defining the channels (Ch) and the source line (17) have straight-line edges adjacent the source line (17) and adjacent the channel (Ch).
REFERENCES:
patent: 5019527 (1991-05-01), Ohshima et al.
Donaldson Richard L.
Heiting Leo N.
Hille Rolf
Limanek Robert
Lindgren Theodore D.
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