Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-07-25
1998-05-19
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257321, 257622, 257655, H01L 29788
Patent
active
057539510
ABSTRACT:
An EEPROM memory cell has a floating gate structure that extends over a sharp edge of a memory cell trench and into the trench. Channel hot electron injection techniques are used in conjunction with the floating gate structure to lower required programming voltages and times for the EEPROM cell. Further reductions in programming times and voltages are achieved using trench sidewall diffusions and substrate surface grooves. When used, the floating gate contourally follows the grooves intersecting the surface of the substrate.
REFERENCES:
patent: 4425631 (1984-01-01), Adam
patent: 4511811 (1985-04-01), Gupta
patent: 4673829 (1987-06-01), Gupta
patent: 4796228 (1989-01-01), Baglee
patent: 4814840 (1989-03-01), Kameda
patent: 4835741 (1989-05-01), Baglee
patent: 4975383 (1990-12-01), Baglee
patent: 4975384 (1990-12-01), Baglee
patent: 4990979 (1991-02-01), Otto
patent: 5040036 (1991-08-01), Hazani
patent: 5053839 (1991-10-01), Esquivel et al.
patent: 5162247 (1992-11-01), Hazani
patent: 5291439 (1994-03-01), Kauffmann et al.
patent: 5315142 (1994-05-01), Acovic et al.
patent: 5486714 (1996-01-01), Hong
patent: 5519653 (1996-05-01), Thomas
Hsu, C.H. & Wu. B.S., "EEPROM Cell For Low Power And High Density Application," IBM Technical Disclosure Bulletin, vol. 35, No. 4B, Sep. 1992, pp. 23-25.
International Business Machines - Corporation
Prenty Mark V.
LandOfFree
EEPROM cell with channel hot electron programming and method for does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with EEPROM cell with channel hot electron programming and method for, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and EEPROM cell with channel hot electron programming and method for will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1855490