Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – In integrated circuit
Reexamination Certificate
2006-07-04
2006-07-04
Smith, Zandra V. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
In integrated circuit
C257S355000, C257S356000, C257S373000, C257S493000, C257S494000, C257S339000
Reexamination Certificate
active
07071528
ABSTRACT:
A double-triggered silicon controller rectifier (SCR) comprises a plurality of N+ diffusion areas, a plurality of P+ diffusion areas, a first N-well region, a second N-well region and a third N-well region formed in a P-substrate. The N+ diffusion areas and the P+ diffusion areas are isolated by shallow trench isolation (STI) structures. Two of the N+ diffusion areas are N-type trigger terminals. Two of the P+ diffusion areas are the P-type trigger terminal.
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Hsu Kuo-Chun
Ker Ming-Dou
Chiu Tsz K.
Jiang Chyun IP Office
National Chiao Tung University
Smith Zandra V.
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