Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold – With electric field controlling semiconductor layer having a...
Reexamination Certificate
2006-08-08
2006-08-08
Flynn, Nathan J. (Department: 3663)
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
With electric field controlling semiconductor layer having a...
C257S336000, C257S402000
Reexamination Certificate
active
07087973
ABSTRACT:
A transistor is formed with a source ballast resistor that regulates channel current. In an LDMOS transistor embodiment, the source ballast resistance may be formed using a high sheet resistance diffusion self aligned to the polysilicon gate, and/or by extending a depletion implant from under the polysilicon gate toward the source region. The teachings herein may be used to form effective ballast resistors for source and/or drain regions, and may be used in many types of transistors, including lateral and vertical transistors operating in a depletion or an enhancement mode, and BJT devices.
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Alter Martin J.
Mallikarjunaswamy Shekar
Vinn Charles L.
Bever Patrick T.
Bever Hoffman & Harms LLP
Flynn Nathan J.
Micrel Incorporated
Mondt Johannes
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