Base-emitter reverse bias protection for BICMOS IC

Details Base-emitter reverse bias protection for BICMOS IC Base-emitter reverse bias protection for BICMOS IC

1991-12-20

1993-07-13

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

In integrated circuit

257567, 257370, 361101, 361 56, H01L 2972

Patent

active

052276570

ABSTRACT:
Emitter-base protection for a first bipolar transistor formed as part of a BiCMOS circuit. A second bipolar transistor is formed in the same well as the first bipolar transistor with both transistors using the well as their collectors. A current path through the collector-emitter of the second transistor provides current to the base of the first transistor maintaining the emitter-to-base voltage of the first transistor at a relatively low reverse potential.

REFERENCES:
patent: 3601625 (1971-08-01), Redwine et al.
patent: 4374364 (1983-02-01), Hemery et al.
patent: 4672416 (1987-06-01), Nakazato et al.
Hot-Carrier Reliability of Bipolar Transistors, by David Burnett and Chenmig Hu. 28th Annual Proceedings Reliability Physics 1990, IEEE Catalog No. 90CH2787-0, pp. 164-169.
Bipolar Transistor Design for Low-Process Temperature 0.5 microprocessor BI-CMOS, by M. Norishima, Y. Niitsu, G. Sasaki, H. Iwai and K. Maeguchi, Semiconductor Device Engineering Laboratory, 9.5.1-9.5.4.

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