Composite controlled semiconductor device and power conversion d

Details Composite controlled semiconductor device and power conversion d Composite controlled semiconductor device and power conversion d

1993-04-02

1998-07-14

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

257110, 257121, 257146, 257147, 257139, 257141, H01L 2706, H01L 2978

Patent

active

057809178

ABSTRACT:
In a composite controlled semiconductor device having an insulated gate, a p type semiconductor region forming no channel is provided between a plurality of p type semiconductor regions forming a channel and the potential of the p type semiconductor region in an ON state takes a value high enough to inject holes into an n type semiconductor region adjacent to the p type semiconductor region.

REFERENCES:
patent: 3196330 (1965-07-01), Moyson
patent: 3896476 (1975-07-01), Kawakami
patent: 4901127 (1990-02-01), Chow et al.
patent: 5077591 (1991-12-01), Chen et al.
patent: 5382826 (1995-01-01), Mojaradi

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