Edge termination for semiconductor devices

Details Edge termination for semiconductor devices Edge termination for semiconductor devices

2011-03-22

2011-03-22

Dickey, Thomas L (Department: 2893)

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

Reverse-biased pn junction guard region

C257SE29327

Reexamination Certificate

active

07911021

ABSTRACT:
A high-voltage termination structure includes a peripheral voltage-spreading network. One or more trench structures are connected at least partly in series between first and second power supply voltages. The trench structures include first and second current-limiting structures connected in series with a semiconductor material, and also includes permanent charge in a trench-wall dielectric. The current-limiting structures in the trench structures are jointly connected in a series-parallel ladder configuration. The current-limiting structures, in combination with the semiconductor material, provide a voltage distribution between the core portion and the edge portion.

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