Active solid-state devices (e.g. – transistors – solid-state diode – With means to increase breakdown voltage threshold
Patent
1992-07-23
1995-09-05
Carroll, J.
Active solid-state devices (e.g., transistors, solid-state diode
With means to increase breakdown voltage threshold
257488, 257492, 257493, 257524, H01L 2704
Patent
active
054481007
ABSTRACT:
A high voltage diode having a field plate and substrate separated from a high impurity concentration region by dielectric layers and biased to deplete the high impurity concentration region therebetween before critical field for avalanche is reached for the region.
REFERENCES:
patent: 3446995 (1969-05-01), Castrucci
patent: 3489953 (1970-01-01), Thomas
patent: 3683491 (1972-08-01), Nelson et al.
patent: 3836998 (1974-09-01), Kocsis et al.
patent: 3845495 (1974-10-01), Cauge et al.
patent: 4232328 (1980-11-01), Hartman et al.
patent: 4242697 (1988-12-01), Berthold et al.
patent: 4260431 (1981-04-01), Piotrowski
patent: 4371886 (1983-02-01), Hartman et al.
patent: 4371887 (1983-02-01), Hartman et al.
patent: 4587656 (1986-05-01), Hartman et al.
patent: 4608590 (1986-08-01), Hartman et al.
S. M. Sze, Semiconductor Device Physics and Technology, John Wiley & Sons, New York (1985)p. 160.
"Surface Breakdown in Silicon Planar Diodes Equipped with Field Plates" Solid-State Electronics, 1972, vol. 15, pp. 93-105, Conti & Conti.
Carroll J.
Harris Corporation
LandOfFree
Breakdown diode structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Breakdown diode structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Breakdown diode structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-474058