Depletion region stopper for PN junction in silicon carbide

Details Depletion region stopper for PN junction in silicon carbide Depletion region stopper for PN junction in silicon carbide

1996-07-16

1998-09-01

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

With means to increase breakdown voltage threshold

257 77, 257655, 257657, H01L 2358, H01L 29861

Patent

active

058018360

ABSTRACT:
A semiconductor component comprises a pn junction having a first conductivity type layer and a second conductivity type layer, both being doped layers of silicon carbide (SiC), the first conductivity type layer being lower doped and being provided with a depletion region stopper (DRS) located outside the pn junction, the DRS having stepwise or continuously increasing effective sheet charge density of the first conducting type in a radial direction towards the outer edge of the semiconductor component.

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patent: 5345101 (1994-09-01), Tu
Kazuya, Amplification-Type Solid Image Pickup Element and its Manufacturing Method, Patent Abstracts of Japan, vol. 96, No. 5 Abstract of JP 8-18024 A (Sony Corp.), 1996.

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