LandOfFree - US Patents - Listing for Active solid-state devices (e.g., transistors, solid-state diode,Heterojunction device,With lattice constant mismatch

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Capped anneal

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

CMOS circuit of GaAs/Ge on Si substrate

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Complementary field effect transistors having embedded...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Compound semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Compound semiconductor device and method for producing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Compound semiconductor device and the fabricating method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Compound semiconductor device constructed on a heteroepitaxial s

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Compound semiconductor device for reducing the influence of resi

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Compound semiconductor device formed of nitrogen-containing gall

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Compound semiconductors and a method for thin film growth

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Construction of thin strain-relaxed SiGe layers and method...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Device containing isolation regions with threading dislocations

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Electronic device containing group-III element based nitride...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Embedded SiGe stressor with tensile strain for NMOS current...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Embedded silicon germanium using a double buried oxide...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Epitaxial growth of nitride semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Epitaxial lateral overgrowth of gallium nitride based...

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Epitaxial layer capable of exceeding critical thickness

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

Epitaxial wafer of gallium arsenide phosphide