Electronic device containing group-III element based nitride...

Details Electronic device containing group-III element based nitride... Electronic device containing group-III element based nitride...

2006-09-20

2009-06-30

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S103000, C257SE33028

Reexamination Certificate

active

07554132

ABSTRACT:
An electronic device includes a substrate; a single-crystalline first buffer layer, disposed on the substrate, containing a semiconductor represented by the formula AlxGa1−xN; a non-single-crystalline second buffer layer, disposed on the first buffer layer, containing a semiconductor represented by the formula AlyGa1−yN; and an undoped base layer, disposed on the second buffer layer, containing GaN, wherein 0<×≦1 and 0≦y≦1. The first buffer layer is formed at a temperature of 1000° C. to 1200° C. The second buffer layer is formed at a temperature of 350° C. to 800° C. The substrate contains SiC. The second buffer layer has a thickness of 5 to 20 nm.

REFERENCES:
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patent: 2002/0096683 (2002-07-01), Ramadani et al.
patent: 2005/0051804 (2005-03-01), Yoshida
patent: 8-203834 (1996-08-01), None
patent: 2002-359255 (2002-12-01), None
patent: WO99/59195 (1999-11-01), None
patent: WOOO/25353 (2000-05-01), None
German Office Action dated Mar. 31, 2008, with an English translation.
Chinese Office Action dated May 9, 2008, with an English translation.

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