Compound semiconductor device and method for producing the same

Details Compound semiconductor device and method for producing the same Compound semiconductor device and method for producing the same

1997-02-19

2000-10-17

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257191, H01L 2978, H01L 3300

Patent

active

061335924

ABSTRACT:
A compound semiconductor device includes a contact structure having a plurality of layers provided on a compound semiconductor layer and an electrode provided on the contact structure. The contact structure includes a first contact layer made of In.sub.x Ga.sub.1-x As (0.9.ltoreq.x.ltoreq.1) on the side closest to the electrode.

REFERENCES:
patent: 5373185 (1994-12-01), Sato
patent: 5604356 (1997-02-01), Shiraishi
M. Hasegawa et al., Technical Report of IEICE, ED93-167, MW93-124, pp. 69-74 (1994).
B. Bayraktaroglu et al., IEEE Electron Device Letters, 14(10):493-495 (1993).

Affiliated with

Also associated with

Rating

Compound semiconductor device and method for producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Compound semiconductor device and method for producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Compound semiconductor device and method for producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-471634