Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Patent
1995-06-07
1997-04-29
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
257183, 257201, 257 18, H01L 310328
Patent
active
056252048
ABSTRACT:
A molecular beam epitaxy (MBE) system (10) is provided to grow thin film, epitaxy layers (44, 46, 48, 50) on compound semiconductor substrates (40). A mass spectrometer detector (95) is used to monitor and control the flux from selected sources (21, 23, 25, 27) within the MBE system (10). A uniform layer of indium gallium arsenide (46, 50) may be grown on a semiconductor substrate (40) by controlling the indium flux with respect to substrate (40) temperature and time. An epitaxy layer (46) of indium gallium arsenide with uniform mole fraction concentration and reduced lattice strain is produced.
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Celii Francis G.
Kao Yung-Chung
Donaldson Richard L.
Jackson, Jr. Jerome
Kelley Nathan
Kesterson James C.
Skrehot Michael K.
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