Compound semiconductor device

Details Compound semiconductor device Compound semiconductor device

1997-11-25

2000-02-01

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257191, 257192, 257194, H01L 310328

Patent

active

060206047

ABSTRACT:
A compound semiconductor device including a semi-insulating GaAs substrate; an electron transit layer consisting of an InGAs layer formed on the substrate; a mitigation layer formed on the electron transit layer, and consisting of an AlGaInAs layer; and a barrier layer formed on the mitigation layer, consisting of an AlGaAs layer, and having a higher A1 composition ratio than the mitigation layer. Crystal defects in the barrier layer can be reduced, and the compound semiconductor device can have large gains. The barrier layer and the mitigation layers are so thin that a gate voltage sufficiently influences the electron transit layer, and the compound semiconductor device can have a threshold voltage higher than 0V.

REFERENCES:
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patent: 5367183 (1994-11-01), Perer et al.
patent: 5449928 (1995-09-01), Matsugatami et al.
patent: 5495115 (1996-02-01), Kudo et al.
patent: 5610410 (1997-03-01), Imanishi
patent: 5650642 (1997-07-01), Sawada et al.
patent: 5701020 (1997-12-01), Liu et al.

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