Compound semiconductor device for reducing the influence of resi

Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch

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257194, H01L 2906, H01L 29203

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active

053671821

ABSTRACT:
A compound semiconductor device including a semiconductor substrate having (100) plane as a crystal growth plane, a first semiconductor layer as an electron traveling layer and a second semiconductor layer for supplying electrons to the electron traveling layer. The first semiconductor layer is formed on the semiconductor substrate and has a different lattice constant from the semiconductor substrate so that a first strain is applied in the first semiconductor layer in a first strain direction. The second semiconductor layer is formed on the first semiconductor layer and has a different lattice constant from the first semiconductor layer to thereby apply a second strain to the second semiconductor layer. The second strain has a direction that is inverse to the first strain direction. In addition, the thickness of the semiconductor layer is defined so as to compensate for the first strain applied to the first semiconductor layer by the second strain applied to the second semiconductor.

REFERENCES:
patent: 4745449 (1988-05-01), Chang et al.
Kavanagh et al., "Asymmetries In Dislocation Densities, Surface Morphology, and Strain of GaInAs/GaAs Single Heterolayers", Journal of Applied physics, vol. 64, Nov. 15, 1988, pp. 4843-4852.
Highly anisotropic electron mobilities of GaAs/In0.2Gao.8As/A/AI0.3Ga0.7As inverted high electron mobility mobility transistor structures, T. Schweizer et al, pp. 2736-2738.
Orientation dependence of mismatched InxAI1-xAs/InO,53Ga0.47As HFETs, Journal of Crystal Growth 111 (1991) 479-483 North-Holland.
Electronic properties of two-dimensional electron GAS in pseudomorphic InxGa1-As/N-In0.52AI0.48As Heterostructures, Journal of Crystal Growth 95 (1989 189-192, North-Holland, Amsterdam.
Lattice-Mismatched Growth and Transport Properties of In AIAs/In GaAs Heterostructures on GaAs Substrates Japanese Journal of Applied Physics, vol. 28, No. 7 Jul. 1989, pp. L1101-:L1103.

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