Device containing isolation regions with threading dislocations

Details Device containing isolation regions with threading dislocations Device containing isolation regions with threading dislocations

2006-08-30

2008-12-02

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

C257S297000, C257S305000, C257S299000, C257SE21010, C438S703000, C438S172000

Reexamination Certificate

active

07459731

ABSTRACT:
An article of manufacture includes a substrate, a relaxed buffer layer disposed on the substrate, and a plurality of isolation regions formed in the relaxed buffer layer. The isolation regions include threading dislocations while the remainder of the relaxed buffer layer is substantially free of threading dislocations. The relaxed buffer layer may be formed from silicon germanium while the substrate may be formed from silicon. A capping layer may be disposed over the relaxed buffer layer.

REFERENCES:
patent: 6121651 (2000-09-01), Furukawa et al.
patent: 6184144 (2001-02-01), Lo
patent: 6576558 (2003-06-01), Lin et al.
patent: 6872641 (2005-03-01), Chidambarro et al.
patent: 6902965 (2005-06-01), Ge et al.
patent: 2418531 (2006-03-01), None
patent: 2004-111638 (2004-04-01), None
patent: 2004-111638 (2004-04-01), None
Fitzerald et al., Elimination of Dislocations in Heteroexitaxial MBE and RTCVD Gex-Si1-x Grown on Patterned Si Substrates, J. Electronic Materials, 19, 949-954 (1990).
Watson et al., Influence of Misfit Dislocation Interactions on Photoluminescene Spectra of SiGe on Patterned Si, J. Appl. Phys., vol. 83:7, Apr. 1998.
Kim et al., Three Stage Nucleation and Growth of GE Self-Assembled Quantum Dots Grown on Partially Relaxe SiGe Buffer Layers, Phys. Rev. B vol. 68, No. 20, 205312 (2003).
PCT International Search Report for PCT/US2005/26364, Applicant: The Regents of University of California, Form PCT/ISA/210 and 220, dated Oct. 18, 2007 (6 pages).
PCT Written Opinion of the International Search Authority for PCT/US2005/26364, Applicant: The Regents of University of California, Form PCT/ISA/237, dated Oct. 18, 2007 (7 pages).
The International Bureau International Preliminary Report on Patentability for PCT/US2005/26364, Applicant: The Regents of University of California, Form PCT/IB/326, Jan. 31, 2008 (8 pages).

Affiliated with

Also associated with

Rating

Device containing isolation regions with threading dislocations does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Device containing isolation regions with threading dislocations, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Device containing isolation regions with threading dislocations will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4037617