Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Patent
1997-02-20
1999-05-11
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
257 76, 257 97, 257102, 257103, 257609, 257 13, 372 44, 372 45, H01L33/00;29/36
Patent
active
059030178
ABSTRACT:
A gallium nitride (GaN)-based semiconductor device comprises a substrate, a single-crystal layer consisting mainly of GaN with a magnesium (Mg) concentration of N.sub.bg1 cm.sup.-3, the single-crystal layer being provided near the substrate and having a thickness of d.sub.1 .mu.m, and a semiconductor layer consisting mainly of Ga.sub.1-x Al.sub.x N having an Al composition x of at least 0.02 and not higher than 1 and having a thickness of d.sub.2 .mu.m. The single-crystal layer is situated between the substrate and the semiconductor layer, and Mg is added to the semiconductor layer at a concentration of N.sub.Mg cm.sup.-3. The Al composition x, the concentration N.sub.Mg, the concentration N.sub.bg1, the thickness d.sub.1 and the thickness d.sub.2 have the following relationship
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Shuji Nakamura, et al. "InGaN Multi-Quantum-Well-Structure Laser Diodes with Cleaved Mirror Cavity Facets", Jpn. J. Appl. Phys., vol. 35, No. 28, (pp. L217-L219), Feb. 15, 1996.
Fujimoto Hidetoshi
Itaya Kazuhiko
Nishio Johji
Sugiura Lisa
Suzuki Mariko
Guay John
Kabushiki Kaisha Toshiba
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