Epitaxial wafer of gallium arsenide phosphide

Details Epitaxial wafer of gallium arsenide phosphide Epitaxial wafer of gallium arsenide phosphide

1997-02-18

1998-05-12

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

With lattice constant mismatch

257 87, H01L 3300

Patent

active

057510261

ABSTRACT:
In an epitaxial wafer of gallium arsenide phosphide, a single crystal substrate is provided thereon with a gallium arsenide phosphide layer with a varying mixed crystal ratio, a gallium arsenide phosphide layer with a constant mixed crystal ratio, and a nitrogen-doped gallium arsenide phosphide layer with a constant mixed crystal ratio. The nitrogen-doped gallium arsenide phosphide layer with a constant mixed crystal ratio has a carrier concentration of 3.times.10.sup.15 cm.sup.-3 or less.

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patent: 4558336 (1985-12-01), Chang et al.
patent: 4865655 (1989-09-01), Fujita et al.

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