Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Patent
1997-09-24
1998-12-01
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
257192, 257200, 257201, H01L 310328, H01L 310336, H01L 31072
Patent
active
058442600
ABSTRACT:
A compound semiconductor device constructed on a heteroepitaxial substrate includes a silicon substrate, a first compound semiconductor layer of a first compound semiconductor material provided on the silicon substrate as a buffer layer, a second compound semiconductor layer of a second compound semiconductor material having a lattice constant larger than that of the first compound semiconductor layer, and an active device provided on the second compound semiconductor layer, wherein the second compound semiconductor layer has a thickness exceeding a critical thickness above which dislocations develop due to the misfit in the lattice constant between the first and second compound semiconductor layers.
REFERENCES:
patent: 4994867 (1991-02-01), Biegelsen
patent: 5053835 (1991-10-01), Horikawa et al.
J. Appl. Phys., Jun. 1989, Chang et al., 66:2993-2996, Characteristics of dislocations at strained hetroepitaxial InGaAs/GaAs Interfaces.
Journal of Crystal Growth, Jul. 1974, Matthews and Blakeslee, 27:118-125 Defects In Epitaxial Multilayers.
Fujitsu Limited
Loke Steven H.
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