Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Reexamination Certificate
2009-11-05
2010-11-23
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
C257S201000, C257S615000, C257SE21097, C257SE33028, C438S503000, C438S507000
Reexamination Certificate
active
07838903
ABSTRACT:
A GaN layer functions as an electron transit layer and is formed to exhibit, at least at a portion thereof, A/B ratio of 0.2 or less obtained by a photoluminescence measurement, where “A” is the light-emission intensity in the 500-600 nm band, and “B” is the light-emission intensity at the GaN band-edge.
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Imanishi Kenji
Kikkawa Toshihide
Fujitsu Limited
Kratz Quintos & Hanson, LLP
Taylor Earl N
Vu David
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