Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – With lattice constant mismatch
Patent
1995-06-07
1997-08-19
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
With lattice constant mismatch
257191, 257183, 438933, 148 335, H01L 2120, H01L 21324
Patent
active
056591888
ABSTRACT:
Heteroepitaxy of lattice-mismatched semiconductor materials such as GaAs on silicon is accomplished by first growing GaAs (104) on silicon (102), then growing a lattice matched cap of Al.sub.x Ga.sub.1-x As (106), next annealing out defects with the Al.sub.x Ga.sub.1-x As cap (106) limiting desorption of gallium, lastly growing further GaAs (110) directly on the cap. The lattice matched cap is also used as an implant anneal cap.
REFERENCES:
patent: 4267014 (1981-05-01), Davey et al.
patent: 4494997 (1985-01-01), Lemnios et al.
patent: 4561916 (1985-12-01), Akiyama et al.
patent: 4642879 (1987-02-01), Kawata et al.
patent: 4699688 (1987-10-01), Shastry
patent: 4876219 (1989-10-01), Eshita et al.
patent: 4900372 (1990-02-01), Lee et al.
patent: 4910164 (1990-03-01), Shichijo
patent: 4914053 (1990-04-01), Matyi et al.
patent: 5091333 (1992-02-01), Fan et al.
patent: 5183776 (1993-02-01), Lee
patent: 5185288 (1993-02-01), Cook et al.
patent: 5238869 (1993-08-01), Shichijo et al.
patent: 5246878 (1993-09-01), Bhat et al.
Lee, et al., "Ion Implantation and Annealing Properties of Molecular-Beam Epitaxy Grown GaAs-on Si," J. Vac. Sci. Technol., B 5(3), May/Jun. 1987, p. 827-830.
Lee, et al., "Epitaxy of GaAs on Si: MBE and OMCVD," Mat. Res. Soc. Symp. Proc., vol. 91, 1987, pp. 33-44.
Soga, et al., "Epitaxial Growth and Material Properties of GaAs on Si Grown by MOCVD," Journal of Crystal Growth, 77, pp. 498-502, 1986.
Chand, et al., "GaAs Avalanche Photodiodes and the Effect of Rapid Thermal Annealing on Crystalline Quality of GaAs Grown on Si by Molecular-Beam Epitaxy," J. Vac. Sci. Technol., B5(3), May/Jun. 1987, pp. 822-826.
Lee, et al., "Defeat Reduction by Thermal Annealing of GaAs Layers Grown by Molecular Beam Epitaxy on Si Substrates," 50 Appl. Phys. Lett., 31, 1987.
Kojima, et al., "Layer-by Layer Sublimation Observed by Reflection High-energy Electron, Diffraction Intensity Oscillation in a Molecular Beam Epitaxy System," 47 Appl. Phys. Lett., Aug. 1985.
Van Hove, et al., "Mass-Action Control of AlGaAs and GaAs Growth in Molecular Beam Epitaxy," 47 Appl. Phys. Lett., pp. 726-728, 7, Oct. 1, 1985.
Kawabi, et al., "Preferential Desorption of Ga from A1.sub.x Ga.sub.1-x As Grown by Molecular Beam Epitaxy," 23 Jpn. J. Appl. Phys., pp. L351, vol. 23, No. 6, Jun. 1984.
Tanaka, et al., "Single-Longitudinal-Mode Self Aligned (A1Ga)As Double-Heterostructure Lasers Fabricated by Molecular Beam Epitaxy," 24 Jpn. J. Appl. Phys., vol. 24, No. 2, Feb. 1985, pp. L89-90.
Chang, et al., "Interdiffusion Between GaAs and A1As," 29 Appl. Phys. Lett., 1976, pp. 138-140.
Heckingbottom, "Thermodynamic Aspects of Molecular Beam Epitaxy: High Temperature Growth in the GaAs/Ga.sub.1-x A1.sub.x As System," J. Vac. Sci. Technol., B3 (2) Mar./Apr. 1985., pp. 572-575.
Kao Yung-Chung
Plumton Donald L.
Donaldson Richard L.
Kesterson James C.
Monin, Jr. Donald L.
Skrehot Michael K.
Texas Instruments Incorporated
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