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Self-align planerized bottom electrode phase change memory...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Self-aligned memory cells and method for forming

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Self-aligned nano-cross-point phase change memory

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Self-aligned process for manufacturing a phase change memory...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Self-aligned small contact phase-change memory method and...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Self-aligned vertical bipolar junction transistor for phase...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Self-aligned, planar phase change memory elements and devices

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Semiconductor and semiconductor manufacturing arrangements...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Semiconductor article with porous structure

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Semiconductor device and manufacture method thereof

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Semiconductor device and method of fabricating the same

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Semiconductor device and method of manufacturing the same

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Semiconductor device including air gap

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Semiconductor device package

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Intervalley transfer
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Semiconductor device with tunable energy band gap

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device
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Semiconductor devices having a planarized insulating layer

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Semiconductor devices having resistive memory elements

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Semiconductor integrated circuit device

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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