Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-02-09
2010-11-02
Smith, Bradley K (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S246000, C257S248000, C257SE31029, C257S040000
Reexamination Certificate
active
07825396
ABSTRACT:
A method is described for self-aligning a bottom electrode in a phase change random access memory PCRAM device where a top electrode serves as a mask for self-aligning etching of the bottom electrode. The bottom electrode has a top surface that is planarized by chemical mechanical polishing. The top electrode also has a top surface that is planarized by chemical mechanical polishing. A bottom electrode layer like TiN is formed over a substrate and prior to the formation of a via during subsequent process steps. A first dielectric layer is formed over the bottom electrode layer, and a second dielectric layer is formed over the first dielectric layer. A via is formed at a selected section that extends through the first and second dielectric layers.
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Haynes Beffel & Wolfeld LLP
Karimy Mohammad T
Macronix International Co. Ltd.
Smith Bradley K
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