Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2009-02-19
2010-11-23
Potter, Roy K (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE29068, C257S528000
Reexamination Certificate
active
07838863
ABSTRACT:
Provided is a semiconductor device including a resistive memory element. The semiconductor device includes a substrate and the resistive memory element disposed on the substrate. The resistive memory element has resistance states of a plurality of levels according to generation and dissipation of at least one platinum bridge therein.
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Baek In-Gyu
Lee Jang-Eun
Li Xiang-Shu
Sim Hyun-Jun
Yim Eun-Kyung
Myers Bigel & Sibley & Sajovec
Potter Roy K
Samsung Electronics Co,. Ltd.
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