Semiconductor devices having resistive memory elements

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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C257SE29068, C257S528000

Reexamination Certificate

active

07838863

ABSTRACT:
Provided is a semiconductor device including a resistive memory element. The semiconductor device includes a substrate and the resistive memory element disposed on the substrate. The resistive memory element has resistance states of a plurality of levels according to generation and dissipation of at least one platinum bridge therein.

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patent: 1020070005040 (2007-01-01), None

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