Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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Details

C257SE45002, C257SE23164, C365S148000

Reexamination Certificate

active

08076665

ABSTRACT:
A semiconductor device is comprised of a semiconductor substrate, conductive layers stacked above the semiconductor substrate, which is comprised of a conductive polysilicon, and a metal layer provided above the conductive layers. Both ends of the conductive layers have stairsteps respectively. The conductive layers are connected in series by a metal layer which is provided on the stairsteps. The conductive layers connected in series comprise a resistance element.

REFERENCES:
patent: 5643804 (1997-07-01), Arai et al.
patent: 7264985 (2007-09-01), Chung et al.
patent: 7348624 (2008-03-01), Sakaguchi et al.
patent: 2008/0084728 (2008-04-01), Sakuma et al.
H. Tanaka, et al., “Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory”, Symposium on VLSI technology Digest of Technical Papers, 2007, pp. 14-15.

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