Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2009-09-23
2011-12-13
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002, C257SE23164, C365S148000
Reexamination Certificate
active
08076665
ABSTRACT:
A semiconductor device is comprised of a semiconductor substrate, conductive layers stacked above the semiconductor substrate, which is comprised of a conductive polysilicon, and a metal layer provided above the conductive layers. Both ends of the conductive layers have stairsteps respectively. The conductive layers are connected in series by a metal layer which is provided on the stairsteps. The conductive layers connected in series comprise a resistance element.
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H. Tanaka, et al., “Bit Cost Scalable Technology with Punch and Plug Process for Ultra High Density Flash Memory”, Symposium on VLSI technology Digest of Technical Papers, 2007, pp. 14-15.
Dickey Thomas L
Kabushiki Kaisha Toshiba
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Yushin Nikolay
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