Semiconductor device and method of fabricating the same

Details Semiconductor device and method of fabricating the same Semiconductor device and method of fabricating the same

2007-09-28

2011-10-18

Gebremariam, Samuel (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C365S163000

Reexamination Certificate

active

08039828

ABSTRACT:
A semiconductor device such as a phase change memory device includes a semiconductor substrate including an active region, a conductive pattern disposed to expose the active region, an interlayer dielectric pattern provided on the conductive pattern and including an opening formed on the exposed active region and a contact hole spaced apart from the opening to expose the conductive pattern, a semiconductor pattern and a heater electrode pattern electrically connected to the exposed active region and provided in the opening, a contact plug connected to the exposed conductive pattern and provided to fill the contact hole, and a phase change material layer provided on the heater electrode pattern.

REFERENCES:
patent: 6501111 (2002-12-01), Lowrey
patent: 6744088 (2004-06-01), Dennison
patent: 2002/0070379 (2002-06-01), Dennison
patent: 2004/0113137 (2004-06-01), Lowrey
patent: 2004/0234895 (2004-11-01), Lee et al.
patent: 2006/0186483 (2006-08-01), Cho et al.
patent: 2006/0278921 (2006-12-01), Pellizzer et al.
patent: 10-2006-0000845 (2006-01-01), None

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