Self-aligned nano-cross-point phase change memory

Details Self-aligned nano-cross-point phase change memory Self-aligned nano-cross-point phase change memory

2008-12-30

2011-11-01

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000, C257S005000, C257S289000, C257SE29105, C438S900000, C365S148000

Reexamination Certificate

active

08049197

ABSTRACT:
One embodiment is a phase change memory that includes a heater element transversely contacting a storage element of phase change material. In particular, an end of the storage element contacts an end of the heater element. A first pair of dielectric spacers is positioned on opposite sides of the first heater element and a second pair of dielectric spacers is positioned on opposite sides of the first storage element. The storage element, heater element, and first and second pairs of dielectric spacers can be made by a spacer patterning technique.

REFERENCES:
patent: 6462984 (2002-10-01), Xu et al.
patent: 7244956 (2007-07-01), Pellizzer
patent: 7422926 (2008-09-01), Pellizzer et al.
patent: 2007/0057341 (2007-03-01), Pellizzer

Affiliated with

Also associated with

Rating

Self-aligned nano-cross-point phase change memory does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Self-aligned nano-cross-point phase change memory, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Self-aligned nano-cross-point phase change memory will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4253076