Self-aligned vertical bipolar junction transistor for phase...

Details Self-aligned vertical bipolar junction transistor for phase... Self-aligned vertical bipolar junction transistor for phase...

2011-07-26

2011-07-26

Malsawma, Lex (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S577000, C257SE31029, C257SE45001

Reexamination Certificate

active

07985959

ABSTRACT:
A phase change memory may include self-aligned polysilicon vertical bipolar junction transistors used as select devices. The bipolar junction transistors may be formed with double shallow trench isolation. For example, the emitters of each bipolar transistor may be defined by a first set of parallel trenches in one direction and a second set of parallel trenches in the opposite direction. In some embodiments, the formation of parasitic PNP transistors between adjacent emitters may be avoided.

REFERENCES:
patent: 2001/0002062 (2001-05-01), Noble et al.
patent: 2007/0254446 (2007-11-01), Pellizzer et al.
patent: 2008/0117667 (2008-05-01), Nirschl et al.

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