Semiconductor device including air gap

Details Semiconductor device including air gap Semiconductor device including air gap

2009-10-29

2011-12-06

Armand, Marc (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S214000, C257S298000, C257SE45002, C257SE21068, C438S102000

Reexamination Certificate

active

08071971

ABSTRACT:
Embodiments relate to a semiconductor device, and more particularly, to a semiconductor device and a manufacturing method thereof that can reduce RC delay within the semiconductor device. Embodiments provide a semiconductor device including: a first interlayer dielectric layer formed over the a semiconductor substrate, a first metal wire and a second metal wire formed over the first interlayer dielectric layer, a second interlayer dielectric layer formed over the first and second metal wires, and a phase change material layer formed between the first and second metal wires.

REFERENCES:
patent: 2007/0236988 (2007-10-01), Chen
patent: 2008/0096344 (2008-04-01), Lai et al.
patent: 2008/0277642 (2008-11-01), In T Zandt et al.

Affiliated with

Also associated with

Rating

Semiconductor device including air gap does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device including air gap, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device including air gap will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4313865