Self-aligned, planar phase change memory elements and devices

Details Self-aligned, planar phase change memory elements and devices Self-aligned, planar phase change memory elements and devices

2011-03-22

2011-03-22

Pham, Thanh V (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C438S102000, C438S103000

Reexamination Certificate

active

07910905

ABSTRACT:
Phase change memory elements, devices and systems using the same and methods of forming the same are disclosed. A memory element includes first and second electrodes, and a phase change material layer between the first and second electrodes. The phase change material layer has a first portion with a width less than a width of a second portion of the phase change material layer. The first electrode, second electrode and phase change material layer may be oriented at least partially along a same horizontal plane.

REFERENCES:
patent: 5952671 (1999-09-01), Reinberg et al.
patent: 2004/0256694 (2004-12-01), Kostylev et al.
patent: 2006/0261321 (2006-11-01), Happ et al.
patent: 2007/0096248 (2007-05-01), Philipp et al.
patent: 2007/0117315 (2007-05-01), Lai et al.
patent: 1 780 814 (2007-05-01), None
patent: WO 2005/041196 (2005-05-01), None
patent: WO 2006/079952 (2006-08-01), None
Hudgens et al., “Overview of Phase-Change Chalcogenide Nonvolatile Memory Technology,”MRIS Bulletin, Nov. 2004, pp. 829-832.
Lankhorst et al., “Low-cost and nanoscale non-volatile memory concept for future silicon chips,”Nature Materials, vol. 4, Apr. 2005, pp. 347-352.
International Search Report and Written Opinion, May 8, 2008.
P. Haring Bolivar et al., “Lateral Design for Phase Change Random Access Memory Cells with Low-Current Consumption,” European Symposium on Phase Change and Ovonic Science E*PCOS 04, Balzers, Liechtenstein, Sep. 4-7, 2004.
Written Opinion of the International Searching Authority, Mar. 12, 2009.

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