Semiconductor device

Details Semiconductor device Semiconductor device

2004-08-25

2008-09-16

Quach, Tuan N. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S296000, C257S530000, C257S536000, C257SE45002

Reexamination Certificate

active

07425720

ABSTRACT:
A programmable semiconductor device has a switch element in an interconnection layer, wherein in at least one of the inside of a via, interconnecting a wire of a first interconnection layer and a wire of a second interconnection layer, a contact part of the via with the wire of the first interconnection layer and a contact part of the via with the wire of the second interconnection layer, there is provided a variable electrical conductivity member, such as a member of an electrolyte material. The via is used as a variable electrical conductivity type switch element or as a variable resistance device having a contact part with the wire of the first interconnection layer as a first terminal and having a contact part with the wire of the second interconnection layer as a second terminal.

REFERENCES:
patent: 6487106 (2002-11-01), Kozicki
patent: 6668344 (2003-12-01), Sakata et al.
patent: 6969866 (2005-11-01), Lowrey et al.
patent: 7227169 (2007-06-01), Kozicki
patent: 2004/0085826 (2004-05-01), Sakata et al.
patent: 2004/0178403 (2004-09-01), Ovshinsky
patent: 2001-502848 (2001-02-01), None
patent: 98/19350 (1998-05-01), None

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