Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-05-22
2007-05-22
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C438S095000
Reexamination Certificate
active
11009365
ABSTRACT:
The invention relates to a novel memory cell structure and process to fabricate chalcogenide phase change memory. More particularly, it produces a small cross-sectional area of a chalcogenide-electrode contact part of the phase change memory, which affects the current/power requirement of the chalcogenide memory. Particular aspects of the present invention are described in the claims, specification and drawings.
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Beffel, Jr. Ernest J.
Crane Sara
Haynes Beffel & Wolfeld
Macronix International Co. Ltd.
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