Self-aligned small contact phase-change memory method and...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material

Reexamination Certificate

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C257S003000, C438S095000

Reexamination Certificate

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11009365

ABSTRACT:
The invention relates to a novel memory cell structure and process to fabricate chalcogenide phase change memory. More particularly, it produces a small cross-sectional area of a chalcogenide-electrode contact part of the phase change memory, which affects the current/power requirement of the chalcogenide memory. Particular aspects of the present invention are described in the claims, specification and drawings.

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