Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2011-03-08

2011-03-08

Doan, Theresa T (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S002000, C257S003000, C438S095000

Reexamination Certificate

active

07902539

ABSTRACT:
Any of a plurality of contact plugs which reaches a diffusion layer serving as a drain layer of an MOS transistor has an end provided in contact with a lower surface of a thin insulating film provided selectively on an interlayer insulating film. A phase change film constituted by GST to be a chalcogenide compound based phase change material is provided on the thin insulating film, and an upper electrode is provided thereon. Any of the plurality of contact plugs which reaches the diffusion layer serving as a source layer has an end connected directly to an end of a contact plug penetrating an interlayer insulating film.

REFERENCES:
patent: 7071485 (2006-07-01), Takaura et al.
patent: 2006-287222 (2006-10-01), None
patent: 2006-294970 (2006-10-01), None
patent: 2006-352082 (2006-12-01), None
Y.N. Hwang et al., “Writing Current Reduction for High-density Phase-change RAM,” International Electron Devices Meeting (2003), pp. 893-896.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2774486