Semiconductor devices having a planarized insulating layer

Details Semiconductor devices having a planarized insulating layer Semiconductor devices having a planarized insulating layer

2011-03-22

2011-03-22

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S754000, C257SE23141, C257SE45001, C257SE45002

Reexamination Certificate

active

07910912

ABSTRACT:
A semiconductor device includes at least one phase-change pattern disposed on a semiconductor substrate. A planarized capping layer, a planarized protecting layer, and a planarized insulating layer are sequentially stacked to surround sidewalls of the at least one phase-change pattern. An interconnection layer pattern is disposed on the planarized capping layer, the planarized protecting layer, and the planarized insulating layer. The interconnection layer pattern is in contact with the phase-change pattern.

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