Self-aligned process for manufacturing a phase change memory...

Details Self-aligned process for manufacturing a phase change memory... Self-aligned process for manufacturing a phase change memory...

2007-07-17

2007-07-17

Parker, Kenneth (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257S005000, C365S158000, C365S171000, C365S200000

Reexamination Certificate

active

10824631

ABSTRACT:
A process for manufacturing a phase change memory cell, comprising the steps of: forming a resistive element; forming a delimiting structure having an aperture over the resistive element; forming a memory portion of a phase change material in the aperture, the resistive element and the memory portion being in direct electrical contact and defining a contact area of sublithographic extension. The step of forming a memory portion further includes filling the aperture with the phase change material and removing from the delimiting structure an exceeding portion of the phase change material exceeding the aperture.

REFERENCES:
patent: 6316784 (2001-11-01), Zahorik et al.
patent: 6440837 (2002-08-01), Harshfield
patent: 6512241 (2003-01-01), Lai
patent: 6545287 (2003-04-01), Chiang
patent: 6891747 (2005-05-01), Bez et al.
patent: 2002/0017701 (2002-02-01), Klersy et al.
patent: 2003/0047762 (2003-03-01), Lowrey
patent: 2003/0231530 (2003-12-01), Bez et al.
patent: WO 02/09206 (2002-01-01), None

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