Edge-contacted vertical carbon nanotube transistor
Electric device with phase change material and method of...
Electric device with phase change material and parallel heater
Electric field induced phase transitions and dynamic tuning...
Electric switching device and electric circuit device having...
Electrical device using phase change material, phase change...
Electrically erasable memory elements characterized by reduced c
Electrically erasable memory elements having improved set resist
Electrically erasable phase change memory
Electrically erasable, directly overwritable, multibit single ce
Electrically erasable, directly overwritable, multibit single ce
Electrically erasable, directly overwritable, multibit single ce
Electrically programmable memory element
Electrically programmable memory element with improved contacts
Electrically programmable memory element with improved contacts
Electrically programmable memory element with raised pore
Electrically programmable memory element with reduced area...
Electrically rewritable non-volatile memory element and...
Electrode for phase change memory device and method
Electrode having a transparent electrode layer, electronic...