Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2007-12-11
2007-12-11
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S246000, C257SE27004, C438S466000, C438S095000, C438S900000, C365S100000, C365S145000, C338S009000, C338S195000
Reexamination Certificate
active
10539102
ABSTRACT:
The electric device (1, 100) has a body (2, 102) having a resistor (7, 107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (7, 107) has a first electrical resistance when the phase change material is in the first phase and a second electrical resistance, different from the first electrical resistance, when the phase change material is in the second phase. The body (2, 102) further has a heating element (6, 106) being able to conduct a current for enabling a transition from the first phase to the second phase. The heating element (6, 106) is arranged in parallel with the resistor (7, 107).
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Lankhorst Martijn Henri Richard
Meinders Erwin Rinaldo
Widdershoven Franciscus Petrus
Wolters Robertus Adrianus Maria
Jackson Jerome
NXP B.V.
Valentine Jami M
Zawilski Peter
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