Electrically erasable, directly overwritable, multibit single ce

Details Electrically erasable, directly overwritable, multibit single ce Electrically erasable, directly overwritable, multibit single ce

1991-08-19

1994-03-22

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

257 4, 257 5, H01L 4500

Patent

active

052967166

ABSTRACT:
A solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.

REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3699543 (1972-10-01), Neale
patent: 3918032 (1975-11-01), Nicolaides
patent: 4177475 (1979-12-01), Holmberg
patent: 4203123 (1980-05-01), Shanks
patent: 4845533 (1989-07-01), Pryor
patent: 5166758 (1992-11-01), Ovshinsky et al.

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