Search
Selected: B

Barrier material encapsulation of programmable material

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Biasing a transistor out of a supply voltage range

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Bistable resistance value acquisition device, manufacturing...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Bottom electrode for memory device and method of forming the...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Bottom electrode geometry for phase change memory

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Bridge resistance random access memory device with a...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Buried channel vertical double diffusion MOS device

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate

  [ 0.00 ] – not rated yet Voters 0   Comments 0
  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.