Electrically erasable phase change memory

Details Electrically erasable phase change memory Electrically erasable phase change memory

1991-01-18

1992-11-24

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

365163, 257 4, 257 5, H01L 4500

Patent

active

051667584

ABSTRACT:
An electrically erasable phase change memory utilizing a stoichiometrically and volumetrically balanced phase change material in which both the switching times and the switching energies required for the transitions between the amorphous and the crystalline states are substantially reduced below those attainable with prior art electrically erasable phase change memories. One embodiment of the invention comprises an integrated circuit implementation of the memory in a high bit density configuration in which manufacturing costs are correspondingly reduced and performance parameters are further improved.

REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3699543 (1972-10-01), Neale
patent: 3918032 (1975-11-01), Nicolaides
patent: 4177475 (1979-12-01), Holmberg
patent: 4203123 (1980-05-01), Shanks
patent: 4845533 (1989-07-01), Pryor

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