Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-10-10
2006-10-10
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S002000, C257S246000, C257SE27004, C438S466000, C438S095000
Reexamination Certificate
active
07119353
ABSTRACT:
The electric device (100) has a body (102) having a resistor (107) comprising a phase change material being changeable between a first phase and a second phase. The resistor (107) has a first electrical resistance when the phase change material is in the first phase, and a second electrical resistance, different from the first electrical resistance, when the phase change material is in the second phase. The phase change material constitutes a conductive path between a first contact area and a second contact area. A cross-section of the conductive path is smaller than the first contact area and the second contact area. The body (102) may further have a heating element106being able to conduct a current for enabling a transition from the first phase to the second phase. The heating element (106) is preferably arranged in parallel with the resistor (107).
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Ketelaars Wilhelmus Sebastianus Marcus Maria
Lankhorst Martijn Henri Richard
Meinders Erwin Rinaldo
Widdershoven Franciscus Petrus
Wolters Robertus Adrianus Maria
Budd Paul
Jackson Jerome
Koninklijke Phillips Electronics N.V.
Zawilski Peter
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