4. Active solid-state devices (e.g., transistors, solid-state diode
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Ultra high density phase change memory having improved...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Ultra-high density storage device using phase change diode...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Unidirectionally conductive materials for interconnection

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Unidirectionally conductive materials for interconnection

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Use of Ta-capped metal line to improve formation of memory...

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Using selective deposition to form phase-change memory cells

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Using selective deposition to form phase-change memory cells

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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Utilizing atomic layer deposition for programmable device

Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
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