Edge-contacted vertical carbon nanotube transistor

Details Edge-contacted vertical carbon nanotube transistor Edge-contacted vertical carbon nanotube transistor

2011-06-14

2011-06-14

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257SE45002, C365S151000, C365S232000

Reexamination Certificate

active

07960713

ABSTRACT:
A vertical device geometry for a carbon-nanotube-based field effect transistor has one or multiple carbon nanotubes formed in a trench.

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