Electrically programmable memory element

Details Electrically programmable memory element Electrically programmable memory element

2007-08-07

2007-08-07

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S003000, C257S004000, C257SE29308, C438S095000

Reexamination Certificate

active

10981826

ABSTRACT:
A programmable resistance memory element including a memory material which is raised above a semiconductor substrate by a dielectric layer.

REFERENCES:
patent: 6031287 (2000-02-01), Harshfield
patent: 6815705 (2004-11-01), Klersy et al.

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