Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-08-16
2011-08-16
Valentine, Jami M (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE51010, C257SE21575, C313S506000, C438S652000, C977S742000
Reexamination Certificate
active
07999247
ABSTRACT:
Disclosed is an electrode having a transparent electrode layer, an opaque electrode layer formed on the transparent electrode layer and catalyst formed on an open surface on the transparent electrode layer, which open surface is not covered by the opaque electrode layer.
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Choi Jun-hee
Zoulkarneev Andrei
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd
Valentine Jami M
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