Electrically programmable memory element with reduced area...

Details Electrically programmable memory element with reduced area... Electrically programmable memory element with reduced area...

2005-09-13

2005-09-13

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Bulk effect device

Bulk effect switching in amorphous material

C257S004000

Reexamination Certificate

active

06943365

ABSTRACT:
An electrically operated programmable resistance memory element having a conductive layer as an electrical contact. The conductive layer has a raised portion extending from an edge of the layer to an end adjacent the memory material.

REFERENCES:
patent: 5414271 (1995-05-01), Ovshinsky et al.
patent: 5687112 (1997-11-01), Ovshinsky
patent: 5854102 (1998-12-01), Gonzalez et al.
patent: 6064084 (2000-05-01), Tanahashi
patent: 6423621 (2002-07-01), Doan et al.

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