Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2011-08-02
2011-08-02
Dickey, Thomas L (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257SE45002
Reexamination Certificate
active
07989793
ABSTRACT:
Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
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F.Pellizzer et al., “Novel μ Trench Phase-Change Memory Cell for Embedded and Stand-Alone Non-Volatile Memory Applications,” 2004 Symposium on VLSI Technology Digest of Technical Papers, pp. 18-19, IEEE.
Tyler A. Lowrey et al., “Characteristics of OUM Phase Change Materials and Devices for High Density Nonvolatile Commodity and Embedded Memory Applications,” Mat. Res. Soc. Symp. Proc. vol. 803, 2004 Materials Research Society.
Jung Soon Won
Lee Seung Yun
Park Young Sam
Yoon Sung Min
Yu Byoung Gon
Dickey Thomas L
Electronics and Telecommunications Research Institute
Yushin Nikolay
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