Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2006-04-04
2006-04-04
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S005000
Reexamination Certificate
active
07023009
ABSTRACT:
An electrically operated memory element comprising a phase-change memory material, a first electrical contact and a second electrical contact. At least one of the electrical contact being a thin-film layer having a sidewall electrical coupled to the memory material.
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Czubatyi Wolodymyr
Klersy Patrick
Kostylev Sergey A.
Ovshinsky Stanford R.
Pashmakov Boil
Cao Phat X.
Ovonyx Inc.
Schlazer Philip H.
Siskind Marvin S.
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