Active solid-state devices (e.g. – transistors – solid-state diode – Bulk effect device – Bulk effect switching in amorphous material
Reexamination Certificate
2005-11-02
2009-06-02
Pham, Thanh V (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Bulk effect device
Bulk effect switching in amorphous material
C257S003000, C257S004000, C257S005000, C438S102000, C438S103000
Reexamination Certificate
active
07541607
ABSTRACT:
A non-volatile memory element includes a bottom electrode12, a bit line14provided on the bottom electrode12, and a recording layer15containing phase change material connected between the bottom electrode12and the bit line14. In accordance with this invention, the bit line14is in contact with a growth initiation surface15aof the recording layer15. This structure can be obtained by forming the bit line14before the recording layer15, resulting in a three-dimensional structure. This decreases the area of contact between the recording layer15and the bit line14, decreasing heat dissipation to the bit line14without increasing the thickness of the recording layer15. With this three-dimensional structure, moreover, there is no top electrode between the bit line14and the recording layer15, keeping down the complexity of the fabrication process.
REFERENCES:
patent: 5185282 (1993-02-01), Lee et al.
patent: 5536947 (1996-07-01), Klersy et al.
patent: 6867425 (2005-03-01), Wicker
patent: 2003/0047765 (2003-03-01), Campbell
patent: 2003/0082908 (2003-05-01), Lowrey
patent: 2004/0042316 (2004-03-01), Lee et al.
patent: 2004/0087074 (2004-05-01), Hwang et al.
patent: 2004/0113232 (2004-06-01), Johnson et al.
patent: 2004/0164290 (2004-08-01), Yi et al.
patent: 2005/0122771 (2005-06-01), Chen
patent: 10-2005-0060435 (2005-06-01), None
Hwang, Y., et al. “Writing Current Reduction for High-density Phase-change RAM.” 2003 IEEE.
Ha, Y., et al. “An Edge Contact Type Cell for Phase Change RAM Featuring Very Low Power Consumption.” 2003 Symposium on VLSI Technology Digest of Technical Papers.
Chinese Office Action, with English Translation, issued in Chinese Patent Application No. CN 2006101439223 dated on Sep. 19, 2008.
Asano Isamu
Lowrey Tyler A.
Elpida Memory Inc.
McDermott Will & Emery LLP
Pham Thanh V
Valentine Jami M
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